Pulsed laser deposition and characterization of La1-xSrxMnO3

被引：6

作者：

Calderon, S. ^{[1
]}

Escobar-Alarcon, L. ^{[2
]}

Camps, Enrique ^{[2
]}

Rodil, S. ^{[3
]}

Betancourt, I. ^{[3
]}

Olaya, J. J. ^{[1
]}

机构：

[1] Univ Nacl Colombia, Bogota, Colombia

[2] Inst Nacl Invest Nucl, Mexico City 11801, DF, Mexico

[3] Univ Nacl Autonoma Mexico, Inst Invest Mat, Mexico City 04510, DF, Mexico

来源：

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING | 2012年 / 15卷 / 05期

关键词：

Ellipsometry; Manganites; Magnetic oxides; THIN-FILMS; MANGANITES; GROWTH;

D O I：

10.1016/j.mssp.2012.03.009

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

La1-xSrxMnO3 manganite films with x=0.15, 0.33 and 0.4 were deposited onto silicon substrates by pulsed laser deposition in an 80/20 Ar/O-2 atmosphere at room temperature. After being deposited, the films were annealed at 900 degrees C in air in order to obtain the desired crystalline phase. Structural characterizations using X-Ray diffraction showed polycrystalline compounds having the predominant peaks corresponding to the perovskite structure. Morphological studies carried out by scanning electron microscopy revealed a very rough surface and led to deducing the nature of the growth process. Spectral ellipsometry was performed between 1.5 and 5 eV range at room temperature, showing electronic transitions near to 2.2 and 4.7 eV in a range of thicknesses between 94 and 107 nm. (C) 2012 Elsevier Ltd. All rights reserved.

引用

页码：492 / 498

页数：7

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