Twinning in multicrystalline silicon for solar cells

被引：30
|
作者：
Stokkan, G. [1 ]
机构：
[1] SINTEF Mat & Chem, Sect Sustainable Energy Technol, Dept Solar Cell Silicon, N-7465 Trondheim, Norway
来源：
JOURNAL OF CRYSTAL GROWTH | 2013年 / 384卷
关键词：
Defects; Twins; Growth from melt; Industrial crystallization; Semiconducting silicon; Solar cells; GRAIN-BOUNDARIES; GROWTH; MECHANISM;
D O I：
10.1016/j.jcrysgro.2013.09.008
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
Twinning in multicrystalline silicon was studied by observing the surface of as-cut wafers and by EBSD. By tracing twin structures downwards to their first point of origin, the conditions at the point of generation were identified. Twins covering the whole width of a grain predominantly originates at junctions between three grain boundaries. Twins also originate at straight grain boundary segments of alternating direction, indicative of faceted grain boundaries. The phenomena are proposed to occur because they reduce grain boundary energy, which is substantiated by pole figure analysis. In addition to the CSL relationship, the orientation of the grain boundary in low energy configurations turned out to be essential. (C) 2013 Elsevier B.V. All rights reserved,
引用
收藏
页码：107 / 113
页数：7
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