A new phase in stoichiometric Cu6Sn5

被引:46
|
作者
Wu, Y. Q. [1 ,2 ]
Barry, J. C. [3 ]
Yamamoto, T. [4 ]
Gu, Q. F. [5 ]
McDonald, S. D. [1 ,2 ]
Matsumura, S. [4 ]
Huang, H. [2 ]
Nogita, K. [1 ,2 ]
机构
[1] Univ Queensland, NS CMEM, Brisbane, Qld 4072, Australia
[2] Univ Queensland, Sch Mech & Min Engn, Brisbane, Qld 4072, Australia
[3] Queensland Univ Technol, Fac Sci & Engn, Brisbane, Qld 4000, Australia
[4] Kyushu Univ, Dept Appl Quantum Phys & Nucl Engn, Nishi Ku, Fukuoka 8190395, Japan
[5] Australian Synchrotron, Powder Diffract Beamline, Clayton, Vic 3168, Australia
基金
澳大利亚研究理事会;
关键词
Cu6Sn5; Phase transformation; X-ray diffraction (XRD); Electron diffraction pattern; Crystallography; SOLDER; GROWTH; SN; NI; RELIABILITY; STABILITY; POWDERS; ALLOYS; CU3SN;
D O I
10.1016/j.actamat.2012.08.024
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The intermetallic compound Cu6Sn5 is a significant microstructural feature of many electronic devices where it is present at the solder substrate interfaces. The time- and temperature-dependent thermomechanical properties of Cu6Sn5 are dependent on the nature and stability of its crystal structure, which has been shown to exist in at least four variants (eta, eta', eta(6) and eta(8)). This research details an additional newly identified monoclinic-based structure in directly alloyed stoichiometric Cu6Sn5 using variable-temperature synchrotron X-ray diffraction (XRD) and transmission electron microscopy. The phase is associated with a departure from the equilibrium temperature of the polymorphic monoclinic hexagonal transformation temperature. The new monoclinic phase can be treated as a modulation of four eta(8)-Cu5Sn4 unit cells plus one eta'-Cu6Sn5 unit cell. It has been labeled as eta(4+1) and has cell parameters of a = 92.241 angstrom, b = 7.311 angstrom, c = 9.880 angstrom and beta = 118.95 degrees determined from electron diffraction patterns. The XRD results could be fitted well to a Rietveld refinement using the new crystal parameters. (C) 2012 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.
引用
收藏
页码:6581 / 6591
页数:11
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