Effect of nitrogen doping on denuded zone formed by rapid thermal process in Czochralski silicon wafer

被引：3
|
作者：
Cui, C [1 ]
Yang, DR [1 ]
Ma, XY [1 ]
Fan, RX [1 ]
Li, LB [1 ]
Que, DL [1 ]
机构：
[1] Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China
来源：
PHYSICA B-CONDENSED MATTER | 2006年 / 376卷
关键词：
denuded zone; oxygen precipitate; silicon;
D O I：
10.1016/j.physb.2005.12.057
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
Denuded zone (DZ) formed by rapid thermal process (RTP) followed with the low-high (Lo-Hi) annealing in nitrogen-doped Czochralski (NCZ) silicon wafer was studied in this paper. In comparison with the conventional CZ silicon, the DZ in NCZ silicon was a little narrower, while the bulk microdefects were much denser, as a result of nitrogen-enhanced oxygen precipitation. It was also found that DZs within CZ and NCZ silicon wafers shrunk notably when further subjected to rigorous oxygen precipitation annealing, however, a width of substantial DZ remained within either wafer. Furthermore, it is definitely proved that the nitrogen doping does not affect the formation of defect-free DZ by the RTP-based internal gettering (IG) process. (c) 2005 Elsevier B.V. All rights reserved.
引用
收藏
页码：216 / 219
页数：4
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