Enhancement in thermoelectric properties of Te-embedded Bi2Te3 by preferential phonon scattering in heterostructure interface

被引：101

作者：

Choi, Hyejin ^{[1
]}

Jeong, Kwangsik ^{[1
]}

Chae, Jimin ^{[1
]}

Park, Hanbum ^{[1
]}

Baeck, Juheyuck ^{[1
]}

Kim, Tae Hyeon ^{[1
]}

Song, Jae Yong ^{[2
]}

Park, Jaehun ^{[3
]}

Jeong, Kwang-Ho ^{[1
]}

Cho, Mann-Ho ^{[1
]}

机构：

[1] Yonsei Univ, Dept Phys, 50 Yonsei Ro, Seoul 03722, South Korea

[2] Korea Res Inst Stand & Sci, Ctr Mat Genome, Daejeon 34113, South Korea

[3] POSTECH, Pohang Accelerator Lab, Pohang 790834, South Korea

来源：

NANO ENERGY | 2018年 / 47卷

基金：

新加坡国家研究基金会;

关键词：

Bi2Te3; Thermoelectric; Nano-structure; LATTICE THERMAL-CONDUCTIVITY; TOTAL-ENERGY CALCULATIONS; EPITAXIAL-GROWTH; FIGURE; FILMS; SI; DYNAMICS; STATE; GAAS;

D O I：

10.1016/j.nanoen.2018.03.009

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

A comprehensive understanding of the nano-structural effects that cause reduction in thermal conductivity represents important challenges for the development of thermoelectric materials with an improved figure of merit ZT. Bismuth telluride (Bi2Te3)-based thermoelectric materials exhibit very low levels of thermal conductivity. In this study, a Te crystal-embedded Bi2Te3 (Te-Bi2Te3) thin film was formed by establishing a specific annealing temperature for a Te-rich Bi/Te multilayered structure. Modulations in structure and composition were observed at the boundaries between the two phases of Te and Bi2Te3. Furthermore, the samples contained regularly shaped nanometer-scale Bi2Te3 single grains. Therefore, we obtained a dramatic ZT value of 2.27 (+ 0.04, -0.08) at 375 K from the Te-Bi2Te3 thin film. Finally, we confirmed that interface phonon scattering between the Te-Bi2Te3 boundaries plays an important role in inter-grain phonon transport, which results in a reduction in the lattice thermal conductivity.

引用

页码：374 / 384

页数：11

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