Optical characterization of silicon carbide polytypes

被引：0

作者：

Devaty, RP

Choyke, WJ

机构：

来源：

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 1997年 / 162卷 / 01期

关键词：

D O I：

10.1002/1521-396X(199707)162:1<5::AID-PSSA5>3.3.CO;2-A

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

This article is a review of recent progress in our understanding of the optical properties of the important polytypes of SiC: 3C, 4H, GH, and 15R. We focus or. experimental work hut also compare results obtained by experiment with theory. The topics of emphasis are: 1. vacuum ultraviolet reflectivity, 2. free excitons, 3. spectroscopy of shallow donors and acceptors; 4. she impurity boron in SiC; 5. the rare earth impurity erbium in SiC, and 6. optical properties of porous SiC.

引用

页码：5 / 38

页数：34

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