Optical characterization of silicon carbide polytypes

被引：0
|
作者：
Devaty, RP
Choyke, WJ
机构：
来源：
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 1997年 / 162卷 / 01期
关键词：
D O I：
10.1002/1521-396X(199707)162:1<5::AID-PSSA5>3.3.CO;2-A
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
This article is a review of recent progress in our understanding of the optical properties of the important polytypes of SiC: 3C, 4H, GH, and 15R. We focus or. experimental work hut also compare results obtained by experiment with theory. The topics of emphasis are: 1. vacuum ultraviolet reflectivity, 2. free excitons, 3. spectroscopy of shallow donors and acceptors; 4. she impurity boron in SiC; 5. the rare earth impurity erbium in SiC, and 6. optical properties of porous SiC.
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页码：5 / 38
页数：34
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