Kinetics of Graphene Formation on Rh(111) Investigated by In Situ Scanning Tunneling Microscopy

被引：34
|
作者：
Dong, Guocai [1 ,2 ]
Frenken, Joost W. M. [1 ]
机构：
[1] Leiden Univ, Kamerlingh Onnes Lab, NL-2300 RA Leiden, Netherlands
[2] JiangNan Graphene Res Inst, Wujin, Changzhou, Peoples R China
来源：
ACS NANO | 2013年 / 7卷 / 08期
关键词：
graphene; scanning tunneling microscopy; surface kinetics; chemical vapor deposition; EPITAXIAL GRAPHENE; GROWTH-MECHANISM; SURFACES; METALS; EDGES;
D O I：
10.1021/nn402229t
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
In situ scanning tunneling microscopy observations of, graphene formation on Rh(111) show that the moire pattern between the lattices of the overlayer and substrate has a decisive influence on the growth. The process is modulated in the large unit cells of the moire pattern. We distinguish two steps: the addition of a unit cell that introduces one or more new kinks and the addition of further unit cells that merely advance the position of an existing kink. Kink creation is the rate-limiting step, with kink creation at small-angle, concave corners in the graphene overlayer exhibiting the lower barrier.
引用
收藏
页码：7028 / 7033
页数：6
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