Physical mechanisms of surface terahertz emission from semiconductors

被引：0

作者：

Krotkus, A. ^{[1
]}

Arlauskas, A. ^{[1
]}

Adomayicius, R. ^{[1
]}

Nevinskas, I. ^{[1
]}

Malevich, V. L. ^{[2
]}

机构：

[1] Ctr Phys Sci & Technol, Sauletekio Av 3, LT-10223 Vilnius, Lithuania

[2] Natl Acad Sci Belarus, Inst Phys, Nezalezhnasti Av 68, Minsk 220072, BELARUS

来源：

TERAHERTZ EMITTERS, RECEIVERS, AND APPLICATIONS VII | 2016年 / 9934卷

关键词：

Narrow gap semiconductors; terahertz emission; femtosecond laser; RADIATION; INAS; DEPENDENCE;

D O I：

10.1117/12.2242113

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

Microscopic origin of THz emission from femtosecond laser excited narrow gap semiconductor surfaces is explained in terms of the photoelectron ballistic movement in non-parabolic and anisotropic conduction band. It has been shown that the azimuthal angle dependences of this emission are caused by the lateral photocurrent component resulting from that anisotropy. A strong THz radiation was observed from the lower symmetry crystal planes illuminated along their surface normal, which has allowed to demonstrate experimentally user-friendly line-of-sight THz emitters made from the bulk InAs and InSb, InAs pn diodes and p-i-n structures with GaInAs active layers.

引用

页数：10

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