The Effect of Annealing Temperature on the Optical Properties of In2S3 Thin Film

被引：1
|
作者：
Xu Boxi [1 ]
Kumar, Mulmudi Hemant [1 ,2 ]
Prabhakar, Rajiv Ramanujam [2 ]
Mathews, Nripan [1 ,2 ]
Mhaisalkar, Subodh G. [1 ,2 ]
机构：
[1] Nanyang Technol Univ, Sch Mat Sci & Engn, Singapore 639798, Singapore
[2] Energy Res Inst NTU, Singapore 637553, Singapore
来源：
NANOSCIENCE AND NANOTECHNOLOGY LETTERS | 2012年 / 4卷 / 07期
关键词：
Solar Cell; Indium Sulfide; Annealing; Crystallinity; Bandgap; ELECTRICAL-PROPERTIES; GROWTH;
D O I：
10.1166/nnl.2012.1386
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Indium Sulfide (In2S3) thin film were deposited on glass substrate through successive ionic layer adsorption and reaction (SILAR) method. The samples were annealed at 250 degrees C, 350 degrees C and 450 degrees C respectively after deposition. The X-ray diffraction (XRD) analysis shows that the sample annealed at 450 degrees C has the most clear and obvious XRD pattern, which indicates that In2S3 annealed at 450 degrees C possess the highest crystallinity. Ultraviolet-visible spectroscopy analysis of the samples shows that the band gap of In2S3 is around 2 eV. This study shows that annealing does not induce any change in optical bandgap of In2S3 thin films on glass substrates as reported elsewhere.
引用
收藏
页码：747 / 749
页数：3
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