Effect of air annealing on the optical electrical and structural properties of In2S3 films

被引:0
|
作者
Metin BEDIR
Mustafa ZTAS
机构
[1] 27310-Gaziantep
[2] Engineering Faculty Department of Engineering Physics Gaziantep University
[3] Turkey
关键词
In2S3; spray pyrolysis; annealing; structural properties;
D O I
暂无
中图分类号
TB383.2 [];
学科分类号
070205 ; 080501 ; 1406 ;
摘要
The effect of the annealing temperature Ta on the optical, electrical and structural properties of the In2S3 films obtained by the spray pyrolysis method at 350℃ substrate temperature was studied. All the In2S3 films annealed in the range from 100 to 400℃ are polycrystalline with (220) preferential orientation. The resistivity decreases as Ta increases until it reaches a value of 25 Ohm-cm for Ta=400℃. The grain size also increases when Ta increases as observed in data calculated from X-ray measurements. XRD data indicates that samples show microstructural perfection improvement as a function of annealing temperature.
引用
收藏
页码:487 / 493
页数:7
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