Production of CuInSe2 thin films by a sequential processes of evaporations and selenization

被引：35
|
作者：
Sadigov, MS [1 ]
Özkan, M
Bacaksiz, E
Altunbas, M
Kopya, AI
机构：
[1] Karadeniz Tech Univ, Fac Sci & Arts, Dept Phys, TR-61080 Trabzon, Turkey
[2] Azerbaijan Acad Sci, Inst Phys, Baku 370143, Azerbaijan
来源：
JOURNAL OF MATERIALS SCIENCE | 1999年 / 34卷 / 18期
关键词：
D O I：
10.1023/A:1004670112975
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Thin films of copper indium diselenide (CuInSe2) were prepared by selenization of CuInSe2-Cu-In multilayered structure on glass substrate. The selenization procedure was carried out in a vapour of elemental selenium in a vacuum chamber. The obtained films were characterised by XRD and SEM measurements. The effects of substrate temperature on the structural, electrical and optical properties were studied. It was found that single phase CuInSe2 thin films with significant adhesion to substrate can be produced by selenization of CuInSe2-Cu-In multilayered structure at 450 degrees C, when the first non single phase CuInSe2 layer was deposited at substrate temperature of 400 degrees C. The thin films were found to be direct band gap semiconductors with a band gap of 0.97 eV. (C) 1999 Kluwer Academic Publishers.
引用
收藏
页码：4579 / 4584
页数：6
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