Influence of Flash Lamp Annealing on Electrical Characteristics of MOS Device with Si/La2O3/n-Si structure

被引：0
|
作者：
Kaneda, T. [1 ]
Kouda, M. [1 ]
Kakushima, K. [1 ]
Ahmet, P. [1 ]
Tsutsui, K. [1 ]
Nishiyama, A. [1 ]
Sugii, N. [1 ]
Natori, K. [1 ]
Hattori, T. [1 ]
Iwai, H. [1 ]
机构：
[1] Tokyo Inst Technol, Frontier Res Ctr, Yokohama, Kanagawa 2268502, Japan
来源：
ULSI PROCESS INTEGRATION 7 | 2011年 / 41卷 / 07期
关键词：
MOBILITY;
D O I：
10.1149/1.3633295
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
The influence of flash lamp Annealing (FLA) on Si/La2O3/n-Si structure and electrical characteristics of MOS devices have been studied. Positive shifts in flat-band voltage (V-fb) were observed in devices with FLA followed by PMA. In addition, it was also observed that the FLA on Si/La2O3/n-Si structure is effective in suppressing the leakage current and interface trap charge density.
引用
收藏
页码：157 / 164
页数：8
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