Interesting Magnetic and Optical Properties of ZnO Co-doped with Transition Metal and Carbon

被引:2
|
作者
Deng, Si-hao [1 ,2 ,3 ,4 ]
Xu, Ming [1 ,2 ]
Duan, Man-yi [3 ,4 ]
Brian, Ong [5 ]
机构
[1] Southwest Univ Nationalities, Key Lab Informat Mat Sichuan Prov, Chengdu 610041, Peoples R China
[2] Southwest Univ Nationalities, Sch Elect & Informat Engn, Chengdu 610041, Peoples R China
[3] Sichuan Normal Univ, Inst Solid State Phys, Chengdu 610068, Peoples R China
[4] Sichuan Normal Univ, Sch Phys & Elect Engn, Chengdu 610068, Peoples R China
[5] Nanyang Technol Univ, NIE, Plasma Sources & Applicat Ctr, Singapore 637616, Singapore
关键词
ZnO; Codoping; Magnetism; Optical property; ELECTRONIC-STRUCTURE; THIN-FILMS; FERROMAGNETISM;
D O I
10.1063/1674-0068/26/03/303-309
中图分类号
O64 [物理化学(理论化学)、化学物理学]; O56 [分子物理学、原子物理学];
学科分类号
070203 ; 070304 ; 081704 ; 1406 ;
摘要
Magnetic and optical properties of ZnO co-doped with transition metal and carbon have been investigated using density functional theory based on first-principles ultrasoft pseudopotential method. Upon co-doping with transition metal (TM) and carbon, the calculated results show a shift in the Fermi level and a remarkable change in the covalency of ZnO. Such cases energetically favor ferromagnetic semiconductor with high Curie temperature due to p-d exchange interaction between TM ions and holes induced by C doping. The total energy difference between the ferromagnetic and the antiferromagnetic configurations, spatial charge and spin density, which determine the magnetic ordering, were calculated in co-doped systems for further analysis of magnetic properties. It was also discovered that optical properties in the higher energy region remain relatively unchanged while those at the low energy region are changed after the co-doping. These changes of optical properties are qualitatively explained based on the calculated electronic structure. The validity of our calculation in comparison with other theoretical predictions will further motivate the experimental investigation of (TM, C) co-doped ZnO diluted magnetic semiconductors.
引用
收藏
页码:303 / 309
页数:7
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