Peridynamic Simulation of Electromigration

被引:3
|
作者
Gerstle, Walter [1 ]
Silling, Stewart [2 ]
Read, David [3 ]
Tewary, Vinod [3 ]
Lehoucq, Richard [2 ]
机构
[1] Univ New Mexico, Albuquerque, NM 87131 USA
[2] Sandia Natl Labs, Livermore, CA 94550 USA
[3] Natl Inst Stand & Technol, Gaithersburg, MD 20899 USA
来源
CMC-COMPUTERS MATERIALS & CONTINUA | 2008年 / 8卷 / 02期
关键词
computational Simulation; cracks; diffusion; electromigration; hillocks; metallic thin films; microelectromechanical systems; multi-physics; multi-scale; peridynamic; voids;
D O I
暂无
中图分类号
TP [自动化技术、计算机技术];
学科分类号
0812 ;
摘要
A theoretical framework, based upon the peridynamic model, is presented for analytical and computational Simulation of electromigration. The framework allows four Coupled physical processes to be modeled simultaneously: mechanical deformation, heat transfer, electrical potential distribution, and vacancy diffusion. The dynamics of void and crack formation, and hillock and whisker growth can potentially be modeled. The framework can potentially be applied at several modeling scales: atomistic, crystallite, multiple crystallite, and macro. The conceptual simplicity of the model promises to permit many phenomena observed in microchips, including electromigration, thermo-mechanical crack formation, and fatigue crack formation, to be analyzed in a systematic and unified manner. Interfacial behavior between dissimilar crystallites and materials can also be handled in a natural way. A computational implementation of the theoretical framework is proposed, and a one-dimensional example is presented.
引用
收藏
页码:75 / 92
页数:18
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