Structural properties of polycrystalline silicon films formed by pulsed rapid thermal processing

被引：7
|
作者：
Wang, YQ [1 ]
Liao, XB
Diao, HW
Zhang, SB
Xu, YY
Chen, CY
Chen, WD
Kong, GL
机构：
[1] Chinese Acad Sci, Inst Semicond, State Key Lab Surface Phys, Beijing 100083, Peoples R China
[2] Chinese Acad Sci, Ctr Condensed Matter Phys, Beijing 100083, Peoples R China
来源：
CHINESE PHYSICS | 2002年 / 11卷 / 05期
关键词：
polycrystalline silicon film; rapid thermal processing; microstructure;
D O I：
10.1088/1009-1963/11/5/315
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
A novel pulsed rapid thermal processing (PRTP) method has been used for realizing solid-phese crystallization of amorphous silicon films prepared by plasma-enhanced chemical vapour deposit ion. The microstructure and surface morphology of the crystallized films were investigated using x-ray diffraction and atomic Force microscopy. The results indicate that PRTP is a suitable post-crystallization technique for fabricating large-area polycrystalline silicon films with good structural quality, such as large grain size, small lattice microstrain and smooth surface morphology on low-cost glass substrates.
引用
收藏
页码：492 / 495
页数：4
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