High-field terahertz response of graphene

被引：80

作者：

Paul, M. J. ^{[1
]}

Chang, Y. C. ^{[2
,3
]}

Thompson, Z. J. ^{[1
]}

Stickel, A. ^{[1
]}

Wardini, J. ^{[1
]}

Choi, H. ^{[4
]}

Minot, E. D. ^{[1
]}

Norris, T. B. ^{[2
,3
]}

Lee, Yun-Shik ^{[1
]}

机构：

[1] Oregon State Univ, Dept Phys, Corvallis, OR 97331 USA

[2] Univ Michigan, Ctr Ultrafast Opt Sci, Ann Arbor, MI 48109 USA

[3] Univ Michigan, Dept Elect Engn & Comp Sci, Ann Arbor, MI 48109 USA

[4] Yonsei Univ, Sch Elect & Elect Engn, Seoul 120749, South Korea

来源：

NEW JOURNAL OF PHYSICS | 2013年 / 15卷

基金：

新加坡国家研究基金会; 美国国家科学基金会;

关键词：

TRANSISTORS; GENERATION; GAS;

D O I：

10.1088/1367-2630/15/8/085019

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We investigate the response of multi-layer epitaxial graphene and chemical vapor deposition (CVD)-grown single-layer graphene to strong terahertz (THz) fields. Contrary to theoretical predictions of strong nonlinear response, the transmitted fields exhibit no harmonic generation, indicating that the nonlinear response is limited by fast electron thermalization due to carrier-carrier scattering. The fast electron heating gives rise to large THz transmission enhancement (>15%) in single-layer CVD graphene at high THz fields (E-THz > 10 kV cm(-1)). The nonlinear effects exhibit non-Drude behavior in the THz conductivity, where THz fields induce extreme non-equilibrium electron distributions.

引用

页数：12

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