Nitrogen Doping Effect on Optical Property of Gallium Oxide Nanowires

被引：5
|
作者：
Ho, Ching-Hwa [1 ]
Tien, Li-Chia [2 ]
Ho, Yao-Yu [3 ]
机构：
[1] Natl Taiwan Univ Sci & Technol, Grad Inst Appl Sci & Technol, Taipei 106, Taiwan
[2] Natl Dong Hwa Univ, Dept Mat Sci & Engn, Shoufeng 974, Hualien, Taiwan
[3] Tamkang Univ, Dept Chem & Mat Engn, New Taipei City 251, Taiwan
来源：
ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY | 2012年 / 1卷 / 02期
关键词：
BETA-GA2O3; NANOWIRES; EMITTING PHOSPHORS; GROWTH; LUMINESCENCE;
D O I：
10.1149/2.010202jss
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Nitrogen doping effect on increasing bandgap and enhancing red-to-near infrared (NIR) emissions has been evaluated by thermoreflectance (TR) and photoluminescence (PL) measurements for beta-Ga2O3 thin-film nanowires. The incorporation of nitrogen dopant decreases unit-cell size and increases direct bandgap of similar to 57 meV for beta-Ga2O3 nanowires. Photoluminescence measurements of nitrogen-doped beta-Ga2O3 (beta-Ga2O3:N) show additional red-to-NIR emission peaks around 1.8 eV in comparison with those of un-doped gallium oxide nanowires. The origins for the gap states and near-band-edge transitions in beta-Ga2O3:N nanowires are evaluated and discussed. (C) 2012 The Electrochemical Society. All rights reserved.
引用
收藏
页码：P78 / P81
页数：4
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