Nitrogen Doping Effect on Optical Property of Gallium Oxide Nanowires

被引：5
|
作者：
Ho, Ching-Hwa [1 ]
Tien, Li-Chia [2 ]
Ho, Yao-Yu [3 ]
机构：
[1] Natl Taiwan Univ Sci & Technol, Grad Inst Appl Sci & Technol, Taipei 106, Taiwan
[2] Natl Dong Hwa Univ, Dept Mat Sci & Engn, Shoufeng 974, Hualien, Taiwan
[3] Tamkang Univ, Dept Chem & Mat Engn, New Taipei City 251, Taiwan
来源：
ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY | 2012年 / 1卷 / 02期
关键词：
BETA-GA2O3; NANOWIRES; EMITTING PHOSPHORS; GROWTH; LUMINESCENCE;
D O I：
10.1149/2.010202jss
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Nitrogen doping effect on increasing bandgap and enhancing red-to-near infrared (NIR) emissions has been evaluated by thermoreflectance (TR) and photoluminescence (PL) measurements for beta-Ga2O3 thin-film nanowires. The incorporation of nitrogen dopant decreases unit-cell size and increases direct bandgap of similar to 57 meV for beta-Ga2O3 nanowires. Photoluminescence measurements of nitrogen-doped beta-Ga2O3 (beta-Ga2O3:N) show additional red-to-NIR emission peaks around 1.8 eV in comparison with those of un-doped gallium oxide nanowires. The origins for the gap states and near-band-edge transitions in beta-Ga2O3:N nanowires are evaluated and discussed. (C) 2012 The Electrochemical Society. All rights reserved.
引用
收藏
页码：P78 / P81
页数：4
相关论文
共 50 条
  • [1] Magnetism and luminescence evolution due to nitrogen doping in manganese-gallium oxide nanowires
    Song, YP
    Wang, PW
    Zhang, XH
    Xu, J
    Li, GH
    Yu, DP
    PHYSICS LETTERS A, 2006, 351 (4-5) : 302 - 307
  • [2] Cathodoluminescence study of isoelectronic doping of gallium oxide nanowires
    Nogales, E.
    Sanchez, B.
    Mendez, B.
    Piqueras, J.
    SUPERLATTICES AND MICROSTRUCTURES, 2009, 45 (4-5) : 156 - 160
  • [3] Fabrication and optical property of silicon oxide layer coated semiconductor gallium nitride nanowires
    Zhang, J
    Zhang, LD
    Jiang, FH
    Yang, YD
    Li, JP
    JOURNAL OF PHYSICAL CHEMISTRY B, 2005, 109 (01): : 151 - 154
  • [4] Annealing effects on the structural and optical properties of gallium oxide nanowires
    Kim, HW
    Kim, NH
    Lee, CM
    JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2005, 16 (02) : 103 - 105
  • [5] Annealing effects on the structural and optical properties of gallium oxide nanowires
    Hyoun Woo Kim
    Nam Ho Kim
    Chongmu Lee
    Journal of Materials Science: Materials in Electronics, 2005, 16 : 103 - 105
  • [6] Unconventional gallium oxide nanowires
    Zhan, JH
    Bando, Y
    Hu, JQ
    Xu, FF
    Golberg, D
    SMALL, 2005, 1 (8-9) : 883 - 888
  • [7] The effect of Cu doping on the mechanical and optical properties of zinc oxide nanowires synthesized by hydrothermal route
    Robak, Elzbieta
    Coy, Emerson
    Kotkowiak, Michal
    Jurga, Stefan
    Zaleski, Karol
    Drozdowski, Henryk
    NANOTECHNOLOGY, 2016, 27 (17)
  • [8] Effect of Nitrogen Doping on the Optical Bandgap and Electrical Conductivity of Nitrogen-Doped Reduced Graphene Oxide
    Witjaksono, Gunawan
    Junaid, Muhammad
    Khir, Mohd Haris
    Ullah, Zaka
    Tansu, Nelson
    Saheed, Mohamed Shuaib Bin Mohamed
    Siddiqui, Muhammad Aadil
    Ba-Hashwan, Saeed S.
    Algamili, Abdullah Saleh
    Magsi, Saeed Ahmed
    Aslam, Muhammad Zubair
    Nawaz, Rab
    MOLECULES, 2021, 26 (21):
  • [9] Effect of Oxide Assisted Metal Nanoparticles on Microstructure and Morphology of Gallium oxide Nanowires
    KyoHong CHOI
    KwonKoo CHO
    GyuBong CHO
    HyoJun AHN
    KiWon KIM
    YooYoung KIM
    材料科学与工程学报, 2007, (06) : 886 - 891
  • [10] Analysis of Optical Properties and Structures of Nitrogen Doped Gallium Oxide
    Kato, Yuma
    Yamamoto, Muneaki
    Ozawa, Akiyo
    Kawaguchi, Yu
    Miyoshi, Akinobu
    Oshima, Takayoshi
    Maeda, Kazuhiko
    Yoshida, Tomoko
    E-JOURNAL OF SURFACE SCIENCE AND NANOTECHNOLOGY, 2018, 16 : 262 - 266
12345