Optical initialization of hole spins in p-doped quantum dots: Orientation efficiency and loss of coherence

被引:5
|
作者
Gawelczyk, Michal [1 ]
Machnikowski, Pawel [1 ]
机构
[1] Wroclaw Univ Technol, Inst Phys, PL-50370 Wroclaw, Poland
关键词
RELAXATION; EXCITONS; DYNAMICS;
D O I
10.1103/PhysRevB.87.195315
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We study theoretically a recently proposed hole spin initialization scheme for p-doped quantum well or dot systems via coupling to trion states with subpicosecond circularly polarized laser pulses. We analyze the efficiency of spin initialization and predict the intrinsic spin coherence loss due to the pulse excitation itself as well as the phonon-induced spin dephasing, both taking place on the time scale of the driving laser pulse. We show that the ratio of the degree of dephasing to the achieved orientation effect does not depend on the pulse area but is sensitive to the temperature and detuning. The optimal excitation parameters are identified.
引用
收藏
页数:7
相关论文
共 50 条
  • [31] Photovoltaic and luminescence properties of Sb- and P-doped Si quantum dots
    Park, Jae Hee
    Shin, Dong Hee
    Kim, Chang Oh
    Choi, Suk-Ho
    Kim, Kyung Joong
    JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2012, 60 (10) : 1616 - 1619
  • [32] Spectroscopy of Surface-State p-Doped CdSe/CdS Quantum Dots
    Morgan, David
    Kelley, David F.
    JOURNAL OF PHYSICAL CHEMISTRY LETTERS, 2018, 9 (15): : 4160 - 4165
  • [33] Facile synthesis of P-doped carbon quantum dots with highly efficient photoluminescence
    Zhou, Jin
    Shan, Xiaoyue
    Ma, Juanjuan
    Gu, Yamin
    Qian, Zhaosheng
    Chen, Jianrong
    Feng, Hui
    RSC ADVANCES, 2014, 4 (11): : 5465 - 5468
  • [34] IR absorption and quantum efficiency of highly p-doped SiGe layers
    Uschmann, J
    Presting, H
    Kibbel, H
    Thonke, K
    Sauer, R
    Cabanski, W
    Jaros, M
    THIN SOLID FILMS, 1997, 294 (1-2) : 340 - 342
  • [35] IR absorption and quantum efficiency of highly p-doped SiGe layers
    Univ of Ulm, Ulm, Germany
    Thin Solid Films, 1-2 (340-342):
  • [36] Electron and hole spins in InP/(Ga,In)P self-assembled quantum dots
    Syperek, M.
    Yakovlev, D. R.
    Yugova, I. A.
    Misiewicz, J.
    Jetter, M.
    Schulz, M.
    Michler, P.
    Bayer, M.
    PHYSICAL REVIEW B, 2012, 86 (12):
  • [37] Optical Measurement and Modeling of Interactions between Two Hole Spins or Two Electron Spins in Coupled InAs Quantum Dots
    Greilich, A.
    Badescu, S. C.
    Kim, D.
    Bracker, A. S.
    Gammon, D.
    PHYSICAL REVIEW LETTERS, 2013, 110 (11)
  • [38] All-optical implementation of a dynamic decoupling protocol for hole spins in (In, Ga) As quantum dots
    Varwig, S.
    Evers, E.
    Greilich, A.
    Yakovlev, D. R.
    Reuter, D.
    Wieck, A. D.
    Bayer, M.
    PHYSICAL REVIEW B, 2014, 90 (12)
  • [39] Coherence properties of trion and exciton states in modulation p-doped CdTe quantum wells
    GONLO-IPCMS, Strasbourg, France
    IQEC Int Quantum Electron Conf Proc, (225):
  • [40] A First-Principle Study of B- and P-Doped Silicon Quantum Dots
    Zeng, Jieqiong
    Yu, Hong
    JOURNAL OF NANOMATERIALS, 2012, 2012