An enhanced model for InGaP/GaAs heterojunction bipolar transistor

被引：2

作者：

Shi, Yuxia ^{[1
]}

Wang, Yan ^{[1
]}

机构：

[1] Tsinghua Univ, Inst Microelect, Beijing 100084, Peoples R China

来源：

MICROELECTRONICS JOURNAL | 2013年 / 44卷 / 02期

关键词：

Heterojunction bipolar transistors (HBT); InGaP/GaAs; Large signal model; VBIC model; HBT MODEL;

D O I：

10.1016/j.mejo.2012.10.011

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents an improved InGaP/GaAs heterojunction bipolar transistor (HBT) model based on the Vertical Bipolar Inter-Company (VBIC) model. New transport current expression is proposed by considering the heterojunction effect. Collector capacitance is developed due to the mobile charge modulation, and the transit time formula is improved to account for electron velocity variation with the collector field under high current. The extraction flow is demonstrated. The new model has been verified by measurements on I-V, S-parameter, cut-off frequency and large-signal conditions. (C) 2012 Elsevier Ltd. All rights reserved.

引用

页码：163 / 168

页数：6

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