Electronic structure and magnetic properties of zigzag blue phosphorene nanoribbons

被引:21
|
作者
Hu, Tao [1 ]
Hong, Jisang [1 ]
机构
[1] Pukyong Natl Univ, Dept Phys, Busan 608737, South Korea
基金
新加坡国家研究基金会;
关键词
LAYER BLACK PHOSPHORUS; INITIO MOLECULAR-DYNAMICS; TOTAL-ENERGY CALCULATIONS; FIELD-EFFECT TRANSISTORS; WAVE BASIS-SET; SEMICONDUCTOR; TRANSPORT; MOBILITY; METALS; STATE;
D O I
10.1063/1.4927848
中图分类号
O59 [应用物理学];
学科分类号
摘要
We investigated the electronic structure and magnetism of zigzag blue phosphorene nanoribbons (ZBPNRs) using first principles density functional theory calculations by changing the widths of ZBPNRs from 1.5 to 5 tun. In addition, the effect of H and O passivation was explored as well. The ZBPNRs displayed intra-edge antiferromagnetic ground state with a semiconducting band gap of similar to 0.35 eV; and this was insensitive to the edge structure relaxation effect. However, the edge magnetistn of ZBPNRs disappeared with H-passivation. Moreover, the band gap of H-passivated ZBPNRs was greatly enhanced because the calculated band gap was similar to 1.77 eV, and this was almost the same as that of two-dimensional blue phosphorene layer. For O-passivated ZBPNRs, we also found an intraedge antiferrotnagnetic state. Besides, both unpassivated and O-passivated ZBPNRs preserved almost the same band gap. We predict that the electronic band structure and magnetic properties can be controlled by means of passivation. Moreover, the edge magnetism can be also modulated by the strain. Nonetheless, the intrinsic physical properties are size independent. This feature can be an advantage for device applications because it may not be necessary to precisely control the width of the nanoribbon. (C) 2015 AIP Publishing LLC.
引用
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页数:5
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