Experimental conduction and valence band of poly(sodium 4-styrenesulfonate) intercalated graphite oxide

被引：2
|
作者：
Jeong, Hae Kyung [1 ]
Zhang, Xin [2 ]
Dowben, P. A. [2 ]
机构：
[1] Daegu Univ, Inst Basic Sci, Dept Phys, Gyongsan 712714, South Korea
[2] Univ Nebraska, Dept Phys & Astron, Nebraska Ctr Mat & Nanosci, Lincoln, NE 68588 USA
来源：
CHEMICAL PHYSICS LETTERS | 2013年 / 572卷
基金：
新加坡国家研究基金会; 美国国家科学基金会;
关键词：
ELECTRONIC-STRUCTURE; SPECTROSCOPY; COMPOSITES; STABILITY; STACKING;
D O I：
10.1016/j.cplett.2013.04.012
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
The electronic structure of poly(sodium 4-styrenesulfonate) intercalated graphite oxide (PSSGO) in the vicinity of the Fermi level was investigated using ultraviolet photoemission and inverse photoemission spectroscopies. The conduction band density of states for PSSGO is similar to that of graphite, indicating facile electron transfer from electrolyte ions to the PSSGO electrode in energy storage device applications. The in situ band gap of 1.9 eV observed was smaller than that of graphite oxide by 0.4 eV, helping to explain the high performance of electric double layer capacitor of PSSGO compared with graphite oxide. (C) 2013 Elsevier B. V. All rights reserved.
引用
收藏
页码：58 / 60
页数：3
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