Si/Ge Quantum Well Light-Emitting Diode for Monolithic Integration in Si Photonics Chips

被引：1

作者：

Saito, S. ^{[1
,2
,3
]}

Oda, K. ^{[1
,2
,3
]}

Tani, K. ^{[1
,2
,3
]}

Takahashi, M. ^{[1
,2
,3
]}

Nomoto, E. ^{[3
]}

Okumura, T. ^{[3
]}

Suwa, Y. ^{[1
,2
,3
]}

Lee, Y. ^{[3
]}

Sagawa, M. ^{[1
,2
,3
]}

Sugawara, T. ^{[1
,2
,3
]}

Ido, T. ^{[1
,2
,3
]}

机构：

[1] PETRA, Kokubunji, Tokyo 1858601, Japan

[2] Inst Photon Elect Convergence Syst Technol PECST, Kokubunji, Tokyo 1858601, Japan

[3] Hitachi Ltd, Cent Res Lab, Kokubunji, Tokyo 1858601, Japan

来源：

NANOSCALE LUMINESCENT MATERIALS 2 | 2012年 / 45卷 / 05期

关键词：

POROUS SILICON; OPTICAL GAIN; LUMINESCENCE; ELECTROLUMINESCENCE; SUPERLATTICES; TEMPERATURE; CONFINEMENT; LASER; WIRE;

D O I：

10.1149/1.3700416

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

A light source made of group IV elements is the only missing device component to realize full monolithic integration on a Si chip to realize the convergence of photonics and electronics by Si photonics. It is well known that Si becomes an efficient light source in quantum confined structures like dots, wires and wells. These nanostructures were previously made by bottom up processes. These days, modern silicon fabrication technology is matured enough to make light-emitting silicon and germanium quantum wells by top down processes. We would like to review our several approaches to develop Si/Ge light sources fabricated in a standard Si process line.

引用

页码：103 / 112

页数：10

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