Metal organic vapor phase epitaxy and Raman spectroscopy of InN for nanostructure applications

被引：13
|
作者：
Briot, O [1 ]
Maleyre, B [1 ]
Ruffenach, S [1 ]
Pinquier, C [1 ]
Demangeot, F [1 ]
Frandon, J [1 ]
机构：
[1] Univ Montpellier 2, GES, CNRS, UMR5650, F-34095 Montpellier 5, France
来源：
5TH INTERNATIONAL CONFERENCE ON NITRIDE SEMICONDUCTORS (ICNS-5), PROCEEDINGS | 2003年 / 0卷 / 07期
关键词：
D O I：
10.1002/pssc.200303523
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
Self ordered InN dots are grown by Metal Organic Vapor Phase Epitaxy onto GaN, with very low surface densities. Such nano-objects may be employed in the realization of single photon emitters, for quantum cryptography applications. The growth parameters, like growth temperature, V/III molar ratio and deposition time are investigated. First "large" dots are grown, in order to easily assess the material quality, and are studied both by X-ray diffraction and Raman spectroscopy. After optimising the growth conditions, we decrease the deposition time, in order to obtain nanometer size structures. (C) 2003 WILEYNCH Verlag GmbH & Co. KGaA, Weinheim.
引用
收藏
页码：2851 / 2854
页数：4
相关论文
共 50 条
  • [21] Photoluminescence properties of self-assembled InN dots embedded in GaN grown by metal organic vapor phase epitaxy
    Ke, W. C.
    Fu, C. P.
    Chen, C. Y.
    Lee, L.
    Ku, C. S.
    Chou, W. C.
    Chang, W. -H.
    Lee, M. C.
    Chen, W. K.
    Lin, W. J.
    Cheng, Y. C.
    APPLIED PHYSICS LETTERS, 2006, 88 (19)
  • [22] Raman and x-ray studies of InN films grown by metalorganic vapor phase epitaxy
    Lee, MC
    Lin, HC
    Pan, YC
    Shu, CK
    Ou, J
    Chen, WH
    Chen, WK
    APPLIED PHYSICS LETTERS, 1998, 73 (18) : 2606 - 2608
  • [23] Kinetics of AlGaN metal-organic vapor phase epitaxy for deep-UV applications
    Lobanova, Anna
    Yakovlev, Eugene
    Jeschke, Joerg
    Knauer, Arne
    Weyers, Markus
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2016, 55 (05)
  • [24] ANALYTICAL MODELS FOR THE GROWTH BY METAL ORGANIC VAPOR-PHASE EPITAXY .3. APPLICATIONS
    VANSARK, WGJHM
    DECROON, MHJM
    JANSSEN, GJHM
    GILING, LJ
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1990, 5 (04) : 291 - 298
  • [25] Metal Organic Vapor Phase Epitaxy in a Transmission Electron Microscope
    Widemann, Maximilian
    Krug, David
    Massmeyer, Oliver
    Gruber, Felix
    Beyer, Andreas
    Volz, Kerstin
    SMALL METHODS, 2024, 8 (07)
  • [26] SELECTIVE AND NONPLANAR METAL ORGANIC VAPOR-PHASE EPITAXY
    BAETS, R
    DEMEESTER, P
    VANDAELE, P
    MECHANISMS OF REACTIONS OF ORGANOMETALLIC COMPOUNDS WITH SURFACES, 1989, 198 : 227 - 236
  • [27] PHOTODECOMPOSITION OF PRECURSORS FOR METAL ORGANIC VAPOR-PHASE EPITAXY
    RICHTER, W
    KURPAS, P
    WASCHBUSCH, M
    APPLIED SURFACE SCIENCE, 1992, 54 : 1 - 7
  • [28] Growth Mechanism of InN Nucleation Layers on Epitaxial Graphene Using Metal Organic Vapor Phase Epitaxy and Radio-Frequency Molecular Beam Epitaxy
    Bhuiyan, Ashraful G.
    Ishimaru, Daiki
    Hashimoto, Akihiro
    CRYSTAL GROWTH & DESIGN, 2020, 20 (03) : 1415 - 1421
  • [29] Electrical Properties Of InN Layers Obtained Via Nitridation Of InAs Substrates Using Metal Organic Vapor Phase Epitaxy (MOVPE)
    Rangel-Kuoppa, Victor-Tapio
    Sanchez-Resendiz, Victor
    PHYSICS OF SEMICONDUCTORS: 30TH INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS, 2011, 1399
  • [30] Selective area metal-organic vapor-phase epitaxy of InN, GaN and InGaN covering whole composition range
    Shioda, Tomonari
    Sugiyama, Masakazu
    Shimogaki, Yukihiro
    Nakano, Yoshiaki
    JOURNAL OF CRYSTAL GROWTH, 2009, 311 (10) : 2809 - 2812
12345