Buried Selective Growth of p-doped SiC by VLS Epitaxy

被引：13

作者：

Carole, D. ^{[1
]}

Berckmans, S. ^{[1
]}

Vo-Ha, A. ^{[1
]}

Lazar, M. ^{[2
]}

Tournier, D. ^{[2
]}

Brosselard, P. ^{[2
]}

Souliere, V. ^{[1
]}

Auvray, L. ^{[1
]}

Ferro, G. ^{[1
]}

Brylinski, C. ^{[1
]}

机构：

[1] Univ Lyon 1, CNRS, UMR 5615, Lab Multimat & Interfaces, 43 Bd 11 Novembre 1918, F-69622 Villeurbanne, France

[2] CNRS, UMR 5005, Lab Ampere, F-69621 Villeurbanne, France

来源：

SILICON CARBIDE AND RELATED MATERIALS 2011, PTS 1 AND 2 | 2012年 / 717-720卷

关键词：

VLS growth; Selective epitaxy; p-type doping; Aluminum; TEMPERATURE; MECHANISM; AL;

D O I：

10.4028/www.scientific.net/MSF.717-720.169

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Selective epitaxial growth in buried patterns was studied using the vapour-liquid-solid mechanism in Al-Si melt in order to obtain p+-doped SiC localized layers on 4H-SiC substrate. Homogeneous deposition with step bunched morphology was obtained by adding propane at room temperature before growth at 1100 degrees C. Patterns as large as 800 pm and as narrow as 10 pm were completely filled in this way. The deposition kinetics demonstrates that the process is self limited and mainly depends on the initial amount of Si in the liquid. The deposit is highly p-type doped and the p-n junction is demonstrated.

引用

页码：169 / +

页数：2

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