Evaluation of the temperature stability of AlGaN/GaN heterostructure FET's

被引：145

作者：

Daumiller, I ^{[1
]}

Kirchner, C

Kamp, M

Ebeling, KJ

Kohn, E

机构：

[1] Univ Ulm, Dept Electron Devices & Circuit, D-89069 Ulm, Germany

[2] Univ Ulm, Dept Optoelect, D-89069 Ulm, Germany

来源：

IEEE ELECTRON DEVICE LETTERS | 1999年 / 20卷 / 09期

关键词：

AlGaN/GaN HFET; high-temperature electronics;

D O I：

10.1109/55.784448

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Temperature stress experiments up to 800 degrees C have been applied to AlGaN/GaN FET's grown by MOVPE on sapphire and their individual technological building blocks. It was found that the temperature limit is given by the irreversible degradation of the intrinsic active heterostructure material itself during operation above 600 degrees C. The irreversible degradation was observed for both unconnected and electrically operated devices during temperature stress.

引用

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页码：448 / 450

页数：3

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