IR laser-induced reactive ablation of silicon monoxide in hydrogen and water atmosphere

被引：18
|
作者：
Drinek, V
Bastl, Z
Subrt, J
Yabe, A
Pola, J [1 ]
机构：
[1] Acad Sci Czech Republ, Inst Chem Proc Fundamentals, CR-16502 Prague, Czech Republic
[2] Acad Sci Czech Republ, J Heyrovsky Inst Phys Chem, CR-18223 Prague, Czech Republic
[3] Acad Sci Czech Republ, Inst Inorgan Chem, CZ-25068 Rez, Czech Republic
[4] Minist Int Trade & Ind, Agcy Ind Sci & Technol, Natl Inst Mat & Chem Res, Tsukuba, Ibaraki 305, Japan
来源：
JOURNAL OF MATERIALS CHEMISTRY | 2002年 / 12卷 / 06期
关键词：
D O I：
10.1039/b200058j
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
TEA CO2 laser induced ablation of solid amorphous silicon monoxide in H-2 and H2O atmosphere results in deposition of hydrogenated SiOx films, which reveals that ablated silicon monoxide fragments are reactive towards H-2 and H2O. The films analyzed by FTIR and XP spectroscopy are revealed as rich in H, composed of Si-0 and several SixOyHz configurations and containing both Si-OH and Si-H bonds. The films produced in H2O have (Si) H mostly bonded in the (O-3)Si-H unit and those produced in H-2 have H attached to Si which is bonded to 1-3 oxygen atoms.
引用
收藏
页码：1800 / 1805
页数：6
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