Digitally Controlled Gate Current Source-Based Active Gate Driver for Silicon Carbide MOSFETs

被引：44
|
作者：
Sukhatme, Yash [1 ]
Miryala, Vamshi Krishna [1 ]
Ganesan, P. [1 ]
Hatua, Kamalesh [1 ]
机构：
[1] Indian Inst Technol Madras, Dept Elect Engn, Power Elect & Drives Grp, Chennai 600036, Tamil Nadu, India
来源：
IEEE TRANSACTIONS ON INDUSTRIAL ELECTRONICS | 2020年 / 67卷 / 12期
关键词：
MOSFET; Switches; Logic gates; Silicon carbide; Gate drivers; Threshold voltage; Mathematical model; Active gate driver; current source; EMI; silicon carbide (SiC) inverter; SiC MOSFET; silicon carbide MOSFET; DV/DT;
D O I：
10.1109/TIE.2019.2958301
中图分类号：
TP [自动化技术、计算机技术];
学科分类号：
0812 ;
摘要：
Silicon carbide (SiC) MOSFETs are viable alternatives for silicon (Si) insulated-gate bipolar transistors (IGBTs). However, direct retrofitting of SiC MOSFETs in Si IGBT-based converters is not feasible due to the presence of a higher amount of parasitic inductance. A large voltage and current overshoot along with oscillation are noticed in such attempts as SiC MOSFETs switch very fast. An active gate driver (AGD) can meet the conflicting requirements of faster switching speed and lower overshoot and ringing. A switched current source-based AGD is designed and extensively tested in a 50-kVA voltage source inverter made with SiC MOSFET power modules. The control methodology is discussed and the experimental results are presented in this article.
引用
收藏
页码：10121 / 10133
页数：13
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