Role of oxygen vacancy in HfO2/SiO2/Si(100) interfaces

被引：57
|
作者：
Cho, Deok-Yong
Oh, S. -J. [1 ]
Chang, Y. J.
Noh, T. W.
Jung, Ranju
Lee, Jae-Cheol
机构：
[1] Seoul Natl Univ, CSCMR, Seoul 151747, South Korea
[2] Seoul Natl Univ, ReCOE, Seoul 151747, South Korea
[3] Seoul Natl Univ, Sch Phys, Seoul 151747, South Korea
[4] Samsung Adv Inst Technol, Suwon 440900, South Korea
来源：
APPLIED PHYSICS LETTERS | 2006年 / 88卷 / 19期
关键词：
D O I：
10.1063/1.2201050
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We have investigated the interface states in HfO2/SiO2/Si(100) systems that were prepared by using the in situ pulsed laser deposition technique. X-ray photoelectron spectroscopy data revealed that when the HfO2 film thickness exceeds 11 angstrom, the film composition undergoes a systematic change from Hf silicate to oxygen-deficient HfOx < 2. Furthermore, we determined that the evolution of the interface states clearly depends on the oxygen condition applied during the film growth and that the oxygen vacancy is an important parameter for Hf silicate formation. (c) 2006 American Institute of Physics.
引用
收藏
页数：3
相关论文
共 50 条
  • [41] Photoreflectance Spectroscopic Characterization of Si with SiO2 and HfO2 Dielectric Layers
    Zhang, Tianhao
    Di, Ming
    Bersch, Eric J.
    Chouaib, Houssam
    Salnik, Alex
    Nicolaides, Lena
    Bevis, Chris
    Consiglio, Steven
    Clark, Robert D.
    Diebold, Alain C.
    FRONTIERS OF CHARACTERIZATION AND METROLOGY FOR NANOELECTRONICS: 2009, 2009, 1173 : 109 - +
  • [42] Si nanocrystal synthesis in HfO2/SiO/HfO2 multilayer structures
    Perego, M.
    Seguini, G.
    Wiemer, C.
    Fanciulli, M.
    Coulon, P-E
    Bonafos, C.
    NANOTECHNOLOGY, 2010, 21 (05)
  • [43] Oxygen vacancy and hydrogen in amorphous HfO2
    Sklenard, Benoit
    Cvitkovich, Lukas
    Waldhoer, Dominic
    Li, Jing
    JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2023, 56 (24)
  • [44] Electronic properties of ultrathin (HfO2)x(SiO2)1-x dielectrics on Si(100)
    Jin, Hua
    Oh, Suhk Kun
    Cho, Young Joon
    Kang, Hee Jae
    Tougaard, Sven
    JOURNAL OF APPLIED PHYSICS, 2007, 102 (05)
  • [45] Ferroelectric HfO2 formation by annealing of a HfO2/Hf/HfO2/Si(100) stacked structure
    Kim, Min Gee
    Inoue, Hidefumi
    Ohmi, Shun-ichiro
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2019, 58
  • [46] First-principles study of oxygen vacancy defects in β-quartz SiO2/Si interfaces
    Zheng, Ruogu
    Xu, Zhengyu
    Feng, Muti
    Xiang, Bo
    Wang, Hai
    Wang, Qingbo
    Zhong, Hongxia
    JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2025, 58 (01)
  • [47] Thermal stability of a HfO2/SiO2 interface
    Ikarashi, N
    Watanabe, K
    Masuzaki, K
    Nakagawa, T
    APPLIED PHYSICS LETTERS, 2006, 88 (10)
  • [48] Analytical Formulation of SiO2-IL scavenging in HfO2/SiO2/Si gate stacks - A key is the SiO2/Si interface reaction -
    Li, Xiuyan
    Yajima, Takeaki
    Nishimura, Tomonori
    Nagashio, Kosuke
    Toriumi, Akira
    2014 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM), 2014,
  • [49] Preparation of SiO2/HfO2 high reflectors
    Key Laboratory of Advanced Micro-Structure Materials, Department of Physics, Tongji University, Shanghai 200092, China
    不详
    Qiangjiguang Yu Lizishu, 2012, 6 (1276-1280):
  • [50] Study of Si kinetics in interfacial SiO2 scavenging in HfO2 gate stacks
    Li, Xiuyan
    Yajima, Takeaki
    Nishimura, Tomonori
    Toriumi, Akira
    APPLIED PHYSICS EXPRESS, 2015, 8 (06)
12345