Influence of copper on the catalytic carbon nanotube growth process

被引：0

作者：

Fiedler, Holger ^{[1
]}

Hermann, Sascha ^{[1
]}

Schulz, Stefan E. ^{[1
]}

Gessner, Thomas ^{[1
]}

机构：

[1] Tech Univ Chemnitz, Ctr Microtechnol ZFM, D-09126 Chemnitz, Germany

来源：

2011 IEEE INTERNATIONAL INTERCONNECT TECHNOLOGY CONFERENCE AND MATERIALS FOR ADVANCED METALLIZATION (IITC/MAM) | 2011年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

For Cu/carbon nanotube(CNT) hybrid interconnect technology the growth of CNTs on a conductive substrate connected to Cu lines is required. CNTs were grown by catalytic chemical vapour deposition and the effect of a Cu layer beneath was investigated. By electron energy loss spectroscopy (EELS) we found the Cu to diffuse into the catalyst. This influences CNT growth. Therefore, incorporation of a sufficient diffusion barrier between the Cu layer and the substrate is required. As diffusion barriers we used Ta and TaN.

引用

页数：3

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