共 50 条
- [33] Nucleation and growth of Cu adsorbates on hydrogen-terminated Si(111) surface in solution Jpn J Appl Phys Part 1 Regul Pap Short Note Rev Pap, 12 A (6860-6863):
- [36] HETEROEPITAXIAL GROWTH OF LAYERED SEMICONDUCTOR GASE ON A HYDROGEN-TERMINATED SI(111) SURFACE JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1993, 32 (3B): : L434 - L437
- [37] Nucleation and growth of Cu adsorbates on hydrogen-terminated Si(111) surface in solution JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1999, 38 (12A): : 6860 - 6863
- [38] Modification of hydrogen-terminated Si(111) surface with transition metal dithiocarbamate complexes Transactions of the Materials Research Society of Japan, Vol 31, No 4, 2006, 31 (04): : 1049 - 1052
- [39] Electrochemical method for evaluation of structural perfection of hydrogen-terminated Si(111) surface JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 2000, 39 (12A): : L1206 - L1208
- [40] DIRECT OBSERVATION OF THE GROWTH-PROCESS OF AG THIN-FILM ON A HYDROGEN-TERMINATED SI(111) SURFACE JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1992, 31 (12A): : 4018 - 4019