Low-temperature magnetic characterization of optimum and etch-damaged in-plane magnetic tunnel junctions

被引：8

作者：

Kan, Jimmy J. ^{[1
]}

Lee, Kangho ^{[2
]}

Gottwald, Matthias ^{[1
]}

Kang, Seung H. ^{[2
]}

Fullerton, Eric E. ^{[1
]}

机构：

[1] Univ Calif San Diego, Ctr Magnet Recording Res, La Jolla, CA 92093 USA

[2] Qualcomm Inc, Adv Technol, San Diego, CA 92121 USA

来源：

JOURNAL OF APPLIED PHYSICS | 2013年 / 114卷 / 11期

基金：

美国国家科学基金会;

关键词：

SPIN-TRANSFER; MAGNETORESISTANCE; DEPENDENCE;

D O I：

10.1063/1.4820457

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We describe low-temperature characterization of magnetic tunnel junctions (MTJs) patterned by reactive ion etching for spin-transfer-torque magnetic random access memory. Magnetotransport measurements of typical MTJs show increasing tunneling magnetoresistance (TMR) and larger coercive fields as temperature is decreased down to 10 K. However, MTJs selected from the high-resistance population of an MTJ array exhibit stable intermediate magnetic states when measured at low temperature and show TMR roll-off below 100 K. These non-ideal low-temperature behaviors arise from edge damage during the etch process and can have negative impacts on thermal stability of the MTJs. (C) 2013 AIP Publishing LLC.

引用

页数：4

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