Nanosecond Random Telegraph Noise in In-Plane Magnetic Tunnel Junctions

被引:87
|
作者
Hayakawa, K. [1 ]
Kanai, S. [1 ,2 ,3 ,4 ]
Funatsu, T. [1 ]
Igarashi, J. [1 ]
Jinnai, B. [5 ]
Borders, W. A. [1 ]
Ohno, H. [1 ,3 ,4 ,5 ,6 ]
Fukami, S. [1 ,3 ,4 ,5 ,6 ]
机构
[1] Tohoku Univ, Res Inst Elect Colmnunicat, Lab Nanoelect & Spintron, Sendai, Miyagi 9808577, Japan
[2] Tohoku Univ, Div Estab Frontier Sci, Org Adv Studies, Sendai, Miyagi 9808577, Japan
[3] Tohoku Univ, Ctr Spintron Res Network, Sendai, Miyagi 9808577, Japan
[4] Tohoku Univ, Ctr Sci & Innovat Spintron, Sendai, Miyagi 9808577, Japan
[5] Tohoku Univ, WPI Adv Inst Mat Res, Sendai, Miyagi 9808577, Japan
[6] Tohoku Univ, Ctr Innovat Integrated Elect Syst, Sendai, Miyagi 9800845, Japan
关键词
D O I
10.1103/PhysRevLett.126.117202
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
We study the timescale of random telegraph noise (RTN) of nanomagnets in stochastic magnetic tunnel junctions (MTJs). From analytical and numerical calculations based on the Landau-Lifshitz-Gilbert and the Fokker-Planck equations, we reveal mechanisms governing the relaxation time of perpendicular easy-axis MTJs (p-MTJs) and in-plane easy-axis MTJs (i-MTJs), showing that i-MTJs can be made to have faster RTN. Superparamagnetic i-MTJs with small in-plane anisotropy and sizable perpendicular effective anisotropy show relaxation times down to 8 ns at negligible bias current, which is more than 5 orders of magnitude shorter than that of typical stochastic p-MTJs and about 100 times faster than the shortest time of i-MTJs reported so far. The findings give a new insight and foundation in developing stochastic MTJs for high-performance probabilistic computers.
引用
收藏
页数:6
相关论文
共 50 条
  • [1] Electrical low frequency random telegraph noise in magnetic tunnel junctions
    Liu, Feng
    Ding, Yunfei
    Kemshetti, Ravindra
    Davies, Kenneth
    Rana, Paul
    Mao, Sining
    [J]. JOURNAL OF APPLIED PHYSICS, 2009, 105 (07)
  • [2] Sensitivity Enhancement and Random Telegraph Noise in Magnetic Tunnel Junctions with Compensated Anisotropy
    He, Guanyang
    Zhang, Yiou
    Xiao, Gang
    [J]. PHYSICAL REVIEW APPLIED, 2023, 19 (02)
  • [3] Nanosecond magnetization dynamics during spin Hall switching of in-plane magnetic tunnel junctions
    Rowlands, G. E.
    Aradhya, S. V.
    Shi, S.
    Yandel, E. H.
    Oh, J.
    Ralph, D. C.
    Buhrman, R. A.
    [J]. APPLIED PHYSICS LETTERS, 2017, 110 (12)
  • [4] Write Error Rate Slopes of In-Plane Magnetic Tunnel Junctions
    Lee, Kangho
    Kan, Jimmy J.
    Fullerton, Eric E.
    Kang, Seung H.
    [J]. IEEE MAGNETICS LETTERS, 2012, 3
  • [5] Correlation of telegraph noise between parallel and antiparallel states of magnetic tunnel junctions
    Dhagat, P
    Jander, A
    Nordman, CA
    [J]. JOURNAL OF APPLIED PHYSICS, 2005, 97 (10)
  • [6] ELECTRIC FORMING AND TELEGRAPH NOISE IN TUNNEL-JUNCTIONS
    KOHLSTEDT, H
    GUNDLACH, KH
    KURIKI, S
    [J]. JOURNAL OF APPLIED PHYSICS, 1993, 73 (05) : 2564 - 2568
  • [7] Influence of surface acoustic wave (SAW) on nanoscale in-plane magnetic tunnel junctions
    Zink, Brandon
    Ma, Bin
    Zhang, Delin
    Bhattacharya, Dhritiman
    Abeed, Md Ahsanul
    Bandyopadhyay, Supriyo
    Atulasimha, Jayasimha
    Wang, Jian-Ping
    [J]. AIP ADVANCES, 2024, 14 (02)
  • [8] Reconfigurable Logic Gates with in-Plane Magnetic Tunnel Junctions Representing Full Boolean Functions
    Bae, Gi Yoon
    Hwang, Yechan
    Lee, Sangmin
    Park, Wanjun
    [J]. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2019, 216 (06):
  • [9] TELEGRAPH RESISTANCE NOISE OF TUNNEL-JUNCTIONS - ROLE OF INELASTIC TUNNELING
    KOZUB, VI
    RUDIN, AM
    [J]. EUROPHYSICS LETTERS, 1994, 25 (09): : 687 - 692
  • [10] Electronic noise in magnetic tunnel junctions
    Ingvarsson, S
    Xiao, G
    Wanner, RA
    Trouilloud, P
    Lu, Y
    Gallagher, WJ
    Marley, A
    Roche, KP
    Parkin, SSP
    [J]. JOURNAL OF APPLIED PHYSICS, 1999, 85 (08) : 5270 - 5272