Spatially resolved electrical parameters of silicon wafers and solar cells by contactless photoluminescence imaging

被引：23
|
作者：
Hameiri, Ziv [1 ]
Chaturvedi, Pooja [1 ]
机构：
[1] Natl Univ Singapore, Solar Energy Res Inst Singapore, Singapore 117574, Singapore
来源：
APPLIED PHYSICS LETTERS | 2013年 / 102卷 / 07期
基金：
新加坡国家研究基金会;
关键词：
D O I：
10.1063/1.4792348
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
A contactless method to extract spatially resolved electrical parameters of silicon wafers and silicon solar cells is introduced. The method is based on photoluminescence imaging and can be applied throughout the solar cell fabrication process, even before junction formation. To validate the method, the parameters obtained by it are compared to the ones obtained by the well-established Suns-Voc measurement. Good agreement is obtained. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4792348]
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页数：3
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