STUDY OF THE SYNTHESIS AND FIELD EMISSION CHARACTERISTICS OF ONE-DIMENSIONAL GaN NANOSTRUCTURES

被引：4

作者：

Li, Enling ^{[1
]}

Zhao, Tao ^{[1
]}

Zhao, Danna ^{[1
]}

Cui, Zhen ^{[1
]}

Liu, Mancang ^{[1
]}

机构：

[1] Xian Univ Technol, Sch Sci, Xian 710048, Peoples R China

来源：

SURFACE REVIEW AND LETTERS | 2012年 / 19卷 / 02期

基金：

中国国家自然科学基金;

关键词：

GaN nanostructures; field emission; chemical vapor deposition (CVD); NANOWIRES;

D O I：

10.1142/S0218625X12500114

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The chemical vapor deposition (CVD) process has been used to synthesize gallium nitride (GaN) nanostructures using Pt-coated n-type Si(100) as the substrate, and NH3 gas and Ga2O3 powder as the reaction agents. The surface morphologies of the prepared GaN nanostructures obtained by field emission scanning electron microscopy (FE-SEM) show a large number of GaN nanowires and nanorods on the Si substrates. The synthesized nanostructures are hexagonal as determined from XRD analysis and show a turn-on field of 5 v/mu m at 10 mu A/cm(2).

引用

页数：5

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