Determination of the excess carrier lifetime in the collector region of silicon power bipolar transistors

被引：1

作者：

Wu, Y ^{[1
]}

Sin, JKO

Kang, BW

Guo, ZT

Cheng, X

机构：

[1] Beijing Polytech Univ, Dept Elect Engn, Beijing 100022, Peoples R China

[2] Beijing C&W Elect Grp Co Ltd, Ctr Informat Technol Co, Beijing, Peoples R China

[3] Hong Kong Univ Sci & Technol, Dept Elect & Elect Engn, Clear Water Bay, Peoples R China

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1999年 / 46卷 / 08期

基金：

中国国家自然科学基金;

关键词：

excess carrier lifetime; nondestructive; OCVD; power bipolar transistor; switching;

D O I：

10.1109/16.777170

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An accurate nondestructive method to determine the excess carrier lifetime In the collector region of silicon nf-pv-ni power bipolar transistors is presented for the first time. Based on the measurement of the common-emitter collector characteristics and the collector-base junction C-V characteristics of the transistors, this method is also very simple and practical, The calculation results show that the excess carrier lifetime determined using this method is almost the same (with 1% difference) as that determined using the open circuit voltage decay (OCVD) technique with the emitter removed.

引用

页码：1782 / 1787

页数：6

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