Photo-MOVPE growth and characterization of ZnSe/ZnxCd1-xSe heterostructures

被引：0
|
作者：
Kuznetsov, PI
Yakushcheva, GG
Jitov, VA
Zakharov, LY
Chernushich, AP
机构：
[1] Inst. of Radio Eng. and Electronics, Russian Academy of Science, Moscow Region 141120, Vvedensky 1, Fryazino
来源：
JOURNAL OF CRYSTAL GROWTH | 1997年 / 173卷 / 1-2期
关键词：
D O I：
10.1016/S0022-0248(96)00778-6
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
We have studied the growth of ZnCdSe layers on (100) GaAs substrates using atmospheric metalorganic vapor phase epitaxy (MOVPE). It was found that surface fluctuations of temperature were the main reason for compositional non-uniformity. The photo-assisted technique and a mechanism for rotational and back and forth movement of the substrates have been used for the growth of the Zn0.45Cd0.55Se- and CdSe-based heterostructures giving good homogeneity of the width and composition on a 12 cm(2) area at growth temperatures as low as 400-425 degrees C. Strained single Zn0.45Cd0.55Se layers embedded in a ZnSe matrix were pseudomorphic up to the thickness of 4.5 nm. Strong green emission from a single well and 50 periodic Zn0.45Cd0.55Se/ZnSe superlattices (SL) are observed under 441.6 nm He-Cd laser excitation at 77 K.
引用
收藏
页码：57 / 61
页数：5
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