Optical phonons in ZnxCd1-xSe thin films

被引：17
|
作者：
AvendanoLopez, J [1 ]
CastilloAlvarado, FL [1 ]
EscamillaEsquivel, A [1 ]
ContrerasPuente, G [1 ]
OrtizLopez, J [1 ]
ZelayaAngel, O [1 ]
机构：
[1] IPN,CINVESTAV,DEPT FIS,MEXICO CITY 07000,DF,MEXICO
来源：
SOLID STATE COMMUNICATIONS | 1996年 / 100卷 / 01期
关键词：
semiconductors; thin films; phonons;
D O I：
10.1016/0038-1098(96)00356-0
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
A calculation is presented on the evolution of longitudinal and transverse optical phonons as a function of the concentration parameter x in the system Zn, Cd1-xSe. The calculation is based in an isodisplacement model of the atoms which include interactions to first and second neighbors. The model is fitted to Raman measurements carried out on thin-film samples grown by Close Spaced Vapor Transport (CSVT). Comparison to the experimental data allows to conclude that the x-dependence of these optical modes corresponds to an intermediate-mode behavior. Copyright (C) 1996 Elsevier Science Ltd
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收藏
页码：33 / 36
页数：4
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