Room-temperature ferromagnetism in Er-doped ZnO thin films

被引：59
|
作者：
Qi, Jing [1 ]
Yang, Yinghu [1 ]
Zhang, Li [1 ]
Chi, Junhong [1 ]
Gao, Daqiang [1 ]
Xue, Desheng [1 ]
机构：
[1] Lanzhou Univ, Key Lab Magnetism & Magnet Mat MOE, Lanzhou 730000, Peoples R China
来源：
SCRIPTA MATERIALIA | 2009年 / 60卷 / 05期
关键词：
Compound semiconductors; Magnetic thin films; Raman spectroscopy; X-ray photoelectron spectroscopy (XPS); DILUTED MAGNETIC SEMICONDUCTORS; OXIDES;
D O I：
10.1016/j.scriptamat.2008.10.015
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Zn(1-x)Ei(x)O thin filnis have been fabricated on glass substrates by radiofrequency reactive magnetron sputtering. All the films were ferromagnetic at room temperature except for x = 0 and the estimated magnetic moment per Er ion decreased with increasing Er concentration. The presence of any secondary phase was ruled out based on X-ray diffraction and X-ray photoelectron spectroscopy. The ferromagnetism was attributed to the substitution of Er ions for Zn(21) in ZnO lattices, and could be interpreted by the bound-magnetic-polaron model. (C) 2008 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.
引用
收藏
页码：289 / 292
页数：4
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