Ac conductivity in boron doped amorphous carbon films

被引:20
|
作者
Vishwakarma, P. N. [1 ,2 ,3 ]
机构
[1] Natl Inst Technol Rourkela, Dept Phys, Rourkela 769008, Orissa, India
[2] Indian Inst Sci, Dept Phys, Bangalore 560012, Karnataka, India
[3] UGC DAE Consortium Sci Res, Indore 452017, Madhya Pradesh, India
关键词
Disordered systems; Thin films; Electron-electron interactions; DC HOPPING CONDUCTIVITY; ELECTRICAL-CONDUCTIVITY; CHALCOGENIDE; UNIVERSALITY;
D O I
10.1016/j.ssc.2008.11.006
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
Experimental results on frequency and temperature dependence of ac conduction in boron doped amorphous carbon films are analyzed in the framework of available microscopic models. Depending on the response, the conductivity plot is divided into three regimes (low frequency high temperature; moderate frequency intermediate temperature; high frequency low temperature) and the data in the respective regimes are corroborated with the various theoretical models accordingly. The conductivity data at high frequency and low temperature suggests that relaxation via quantum mechanical tunneling might be the dominant conduction mechanism. At intermediate temperatures and moderate frequencies. the conductivity data is in good agreement with extended pair approximation model with interaction correction. Signature of enhanced interaction effect is observed at low temperature. (C) 2008 Elsevier Ltd. All rights reserved.
引用
收藏
页码:115 / 120
页数:6
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