Ac conductivity in boron doped amorphous carbon films

被引:20
|
作者
Vishwakarma, P. N. [1 ,2 ,3 ]
机构
[1] Natl Inst Technol Rourkela, Dept Phys, Rourkela 769008, Orissa, India
[2] Indian Inst Sci, Dept Phys, Bangalore 560012, Karnataka, India
[3] UGC DAE Consortium Sci Res, Indore 452017, Madhya Pradesh, India
关键词
Disordered systems; Thin films; Electron-electron interactions; DC HOPPING CONDUCTIVITY; ELECTRICAL-CONDUCTIVITY; CHALCOGENIDE; UNIVERSALITY;
D O I
10.1016/j.ssc.2008.11.006
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
Experimental results on frequency and temperature dependence of ac conduction in boron doped amorphous carbon films are analyzed in the framework of available microscopic models. Depending on the response, the conductivity plot is divided into three regimes (low frequency high temperature; moderate frequency intermediate temperature; high frequency low temperature) and the data in the respective regimes are corroborated with the various theoretical models accordingly. The conductivity data at high frequency and low temperature suggests that relaxation via quantum mechanical tunneling might be the dominant conduction mechanism. At intermediate temperatures and moderate frequencies. the conductivity data is in good agreement with extended pair approximation model with interaction correction. Signature of enhanced interaction effect is observed at low temperature. (C) 2008 Elsevier Ltd. All rights reserved.
引用
收藏
页码:115 / 120
页数:6
相关论文
共 50 条
  • [1] Study of Electrical Conductivity and Microcosmic Structure of Tetrahedral Amorphous Carbon Films Doped by Boron
    Wang, Xiaoyan
    Zhao, Yuqing
    ADVANCES IN MATERIALS SCIENCE AND ENGINEERING, 2015, 2015
  • [2] Hopping conduction in boron doped amorphous carbon films
    Vishwakarma, P. N.
    Subramanyam, S. V.
    JOURNAL OF APPLIED PHYSICS, 2006, 100 (11)
  • [3] Hopping conduction in boron doped amorphous carbon films
    Vishwakarma, P.N.
    Subramanyam, S.V.
    Journal of Applied Physics, 2006, 100 (11):
  • [4] Raman characterization of boron doped tetrahedral amorphous carbon films
    Manlin Tan
    Jiaqi Zhu
    Jiecai Han
    Wei Gao
    Aiping Liu
    Xiao Han
    MATERIALS RESEARCH BULLETIN, 2008, 43 (02) : 453 - 462
  • [5] Study of the conductivity of nitrogen doped tetrahedral amorphous carbon films
    Liu, Shu
    Wang, Guangfu
    Wang, Zhenghao
    JOURNAL OF NON-CRYSTALLINE SOLIDS, 2007, 353 (29) : 2796 - 2798
  • [6] ELECTRICAL-PROPERTIES OF CARBON-DOPED AMORPHOUS BORON FILMS
    FELDMAN, C
    CHARLES, HK
    SATKIEWICZ, FG
    BOHANDY, J
    JOURNAL OF THE LESS-COMMON METALS, 1976, 47 (JUN): : 141 - 145
  • [7] Hydrogenated nanostructure boron doped amorphous carbon films by DC bias
    Ishak, A.
    Dayana, K.
    Saurdi, I.
    Malek, M. F.
    Rusop, M.
    INTERNATIONAL CONFERENCE ON APPLIED ELECTRONIC AND ENGINEERING 2017 (ICAEE2017), 2018, 341
  • [8] AC CONDUCTIVITY OF AMORPHOUS INDIUM SELENIUM FILMS
    KHELFA, A
    BENRAMDANE, N
    GUESDON, JP
    JULIEN, C
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1994, 9 (12) : 2263 - 2266
  • [9] Amorphous boron films with enhanced electrical conductivity
    Golikova, OA
    SEMICONDUCTORS, 2000, 34 (03) : 363 - 366
  • [10] Amorphous boron films with enhanced electrical conductivity
    O. A. Golikova
    Semiconductors, 2000, 34 : 363 - 366