Atmospheric-Pressure Plasma Activation for Low Temperature Bonding

被引：0
|
作者：
Low, Y. W. [1 ]
Rainey, P. [1 ]
Baine, P. [1 ]
Montgomery, J. [1 ]
Mitchell, S. J. N. [1 ]
McNeill, D. [1 ]
Gamble, H. S. [1 ]
Armstrong, B. M. [1 ]
机构：
[1] Queens Univ Belfast, No Ireland Semicond Res Ctr, Belfast BT9 5AH, Antrim, North Ireland
来源：
SEMICONDUCTOR WAFER BONDING 11: SCIENCE, TECHNOLOGY, AND APPLICATIONS - IN HONOR OF ULRICH GOSELE | 2010年 / 33卷 / 04期
关键词：
D O I：
10.1149/1.3483521
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
An atmospheric plasma activation system has been employed to study its application on low temperature wafer bonding. Oxygen activation on PECVD oxide for bonding of temperature sensitive materials shows no pin hole when activating oxide with thickness more than 0.25 mu m. Activation on thermal oxide by helium plasma also shows a pin hole free oxide. Bond strength approximately 1000 mJ/m(2) is achieved after 250 degrees C post-bond anneal which is about twice the bond strength of non-activated samples. Multiple UV components from the helium plasma were detected by spectrography. These UV spectra might have contributed to the bond strength enhancement in Si-SiO2 bonding.
引用
收藏
页码：319 / 327
页数：9
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