Atmospheric-Pressure Plasma Activation for Low Temperature Bonding

被引：0
|
作者：
Low, Y. W. [1 ]
Rainey, P. [1 ]
Baine, P. [1 ]
Montgomery, J. [1 ]
Mitchell, S. J. N. [1 ]
McNeill, D. [1 ]
Gamble, H. S. [1 ]
Armstrong, B. M. [1 ]
机构：
[1] Queens Univ Belfast, No Ireland Semicond Res Ctr, Belfast BT9 5AH, Antrim, North Ireland
来源：
SEMICONDUCTOR WAFER BONDING 11: SCIENCE, TECHNOLOGY, AND APPLICATIONS - IN HONOR OF ULRICH GOSELE | 2010年 / 33卷 / 04期
关键词：
D O I：
10.1149/1.3483521
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
An atmospheric plasma activation system has been employed to study its application on low temperature wafer bonding. Oxygen activation on PECVD oxide for bonding of temperature sensitive materials shows no pin hole when activating oxide with thickness more than 0.25 mu m. Activation on thermal oxide by helium plasma also shows a pin hole free oxide. Bond strength approximately 1000 mJ/m(2) is achieved after 250 degrees C post-bond anneal which is about twice the bond strength of non-activated samples. Multiple UV components from the helium plasma were detected by spectrography. These UV spectra might have contributed to the bond strength enhancement in Si-SiO2 bonding.
引用
收藏
页码：319 / 327
页数：9
相关论文
共 50 条
  • [1] Low-temperature Bonding of Laser Diode Chips on Si Substrates with Oxygen and Hydrogen Atmospheric-pressure Plasma Activation
    Takigawa, Ryo
    Higurashi, Eiji
    Suga, Tadatomo
    Sawada, Renshi
    2009 INTERNATIONAL CONFERENCE ON ELECTRONIC PACKAGING TECHNOLOGY & HIGH DENSITY PACKAGING (ICEPT-HDP 2009), 2009, : 399 - +
  • [2] Sterilization by low-temperature atmospheric-pressure plasma
    Dzimitrowicz, Anna
    Jamroz, Piotr
    Nowak, Piotr
    POSTEPY MIKROBIOLOGII, 2015, 54 (02): : 195 - 200
  • [3] Low-temperature atmospheric-pressure plasma sources for plasma medicine
    Setsuhara, Yuichi
    ARCHIVES OF BIOCHEMISTRY AND BIOPHYSICS, 2016, 605 : 3 - 10
  • [4] Application of Low-Temperature Atmospheric-Pressure Plasma in Metallurgy
    Gadzhiev, M. Kh
    Il'ichev, M., V
    Yusupov, D., I
    Tyuftyaev, A. S.
    RUSSIAN METALLURGY, 2021, 2021 (12): : 1504 - 1509
  • [5] Application of Low-Temperature Atmospheric-Pressure Plasma in Metallurgy
    M. Kh. Gadzhiev
    M. V. Il’ichev
    D. I. Yusupov
    A. S. Tyuftyaev
    Russian Metallurgy (Metally), 2021, 2021 : 1504 - 1509
  • [6] Atmospheric-pressure plasma pretreatment for direct bonding of silicon wafers at low temperatures
    Eichler, M.
    Michel, B.
    Thomas, M.
    Gabriel, M.
    Klages, C. -P.
    SURFACE & COATINGS TECHNOLOGY, 2008, 203 (5-7): : 826 - 829
  • [7] Temperature measurement of an atmospheric-pressure plasma torch
    Kuo, SP
    Koretzky, E
    Vidmar, RJ
    REVIEW OF SCIENTIFIC INSTRUMENTS, 1999, 70 (07): : 3032 - 3034
  • [8] Low-temperature bonding of laser diode chips using atmospheric-pressure plasma activation of flat topped Au stud bumps with smooth surfaces
    Yamamoto, Michitaka
    Sato, Takeshi
    Higurashi, Eiji
    Suga, Tadatomo
    Sawada, Renshi
    2012 2ND IEEE CPMT SYMPOSIUM JAPAN, 2012,
  • [9] Atmospheric-pressure low-temperature plasma processes for thin film deposition
    Kakiuchi, Hiroaki
    Ohmi, Hiromasa
    Yasutake, Kiyoshi
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2014, 32 (03):
  • [10] Electrical characteristics of a low-temperature, atmospheric-pressure helium plasma jet
    Sakakita, Hajime
    Shimizu, Tetsuji
    Kiyama, Satoru
    AIP ADVANCES, 2021, 11 (01)
12345