Ion Implantation and Pulsed Laser Melting Processing for the Development of an Intermediate Band Material

被引：3

作者：

Garcia-Hemme, E. ^{[1
,2
]}

Garcia-Hernansanz, R. ^{[1
,2
]}

Olea, J. ^{[2
,3
]}

Pastor, D. ^{[1
,2
,3
]}

del Prado, A. ^{[1
,2
]}

Martil, I. ^{[1
,2
]}

Gonzalez-Diaz, G. ^{[1
,2
]}

机构：

[1] Univ Complutense Madrid, Dept Fis Aplicada Elect & Elect 3, E-28040 Madrid, Spain

[2] Univ Complutense Madrid, UPM, E-28040 Madrid, Spain

[3] Univ Politecn Madrid, Solar Energy Inst, ETSI Telecommun, E-28040 Madrid, Spain

来源：

ION IMPLANTATION TECHNOLOGY 2012 | 2012年 / 1496卷

关键词：

Silicon; Titanium; Ion Implantation; Pulsed Laser Melting; Solar Cell; Intermediate Band; SILICON; ALLOYS;

D O I：

10.1063/1.4766488

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Ti supersaturated Si layers with two different thicknesses have been obtained on the top of a Si substrate by means of ion implantation and pulsed laser melting processes. Time-of-flight Secondary Ion Mass spectrometry (ToF-SIMS) measurements show Ti concentration above the intermediate band formation limit. This feature has been obtained in 20 nm for one of the set of samples and in 120 nm in the other one. Sheet resistance measurements at variable temperature show an unusual electrical decoupling between the Ti implanted layer and the n-Si substrate in the two sets of samples. This behavior has been successfully explained using the intermediate band theory. These results points out that we have achieved thicker layers of intermediate band material.

引用

页码：54 / 57

页数：4

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