A new InGaP GaAs double delta-doped heterojunction bipolar transistor (D3HBT)

被引：0
|
作者：
Liu, WC [1 ]
Cheng, SY [1 ]
Chang, WL [1 ]
Pan, HJ [1 ]
Shie, YH [1 ]
机构：
[1] Natl Cheng Kung Univ, Dept Elect Engn, Tainan 70101, Taiwan
来源：
ICMMT'98: 1998 INTERNATIONAL CONFERENCE ON MICROWAVE AND MILLIMETER WAVE TECHNOLOGY PROCEEDINGS | 1998年
关键词：
D O I：
10.1109/ICMMT.1998.768236
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The double delta-doped heterojunction bipolar transistor (D-3-HBT) is successfully fabricated with improved current-voltage characteristics by employing the insertion of delta-doped sheets at emitter-base (E-B) and base-collector (B-C) heterojunction, Due to the use of delta-doped sheets, the potential spikes at E-B and BC heterojunction are suppressed substantially. Thus a higher emitter injection efficiency (current gain) and a lower knee voltage are obtained. From experimental results, it is shown that the studied D(3)HBTdevice is a good candidate for high-speed and high-power circuit applications.
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页码：100 / 103
页数：4
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