Fe-Doped LaNiO3 Thin Films as Electrodes for BiFeO3 Ferroelectric Thin Films

被引:4
|
作者
Chen, Ruqi [1 ]
Lao, Meimei [1 ]
Xu, Jun [1 ]
Xu, Chudong [2 ]
机构
[1] South China Agr Univ, Ctr Expt Teaching Common Basic Courses, Guangzhou 510642, Guangdong, Peoples R China
[2] South China Agr Univ, Coll Sci, Guangzhou 510642, Guangdong, Peoples R China
基金
中国国家自然科学基金;
关键词
LaNi1-xFexO3; BiFeO3; Chemical Solution Deposition; Conductive Oxide; Ferroelectric Thin Films; ELECTRICAL-PROPERTIES; BUFFER LAYER; TEMPERATURE; HETEROSTRUCTURES; DEPOSITION; SOL;
D O I
10.1166/sam.2015.2404
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
The Fe-substituted LaNiO3 (in a formula LaNi1-xFexO3, or LNFO-x in short) thin films were used as electrodes for the BiFeO3 (BFO) ferroelectric thin films. The effect of Fe substitution on the microstructures and the ferroelectric properties of BFO thin films has been investigated. The BFO/LNFO-x thin films were deposited on Si(100) substrates by a chemical solution deposition method. An improved crystallization of LNFO-x was observed as a consequence of Fe incorporation. The resistivity of the conductive LNFO-x thin films changed from 1.68 x 10(-3) Omega.cm to 3.81 x 10(-3) Omega.cm with the increasing Fe content in the investigated composition range (0 <= x <= 0.15). The perovskite-type BFO thin films with random orientations were well crystallized on the LNFO-x electrodes. The remnant polarization and the permittivity of the BFO thin films increased monotonously with Fe content in the LNFO-x electrodes, while the dielectric loss was almost unchanged. The great improvement in the dielectric and ferroelectric properties of the BFO thin films was described to the resisting of Fe diffusion from BFO to the electrodes due to the existence of Fe in the LNFO-x electrodes.
引用
收藏
页码:2441 / 2444
页数:4
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