Improved ferroelectric and fatigue properties in Ho doped BiFeO3 thin films

被引：14
|
作者：
Yun, Qi
Bai, Yulong
Chen, Jieyu
Gao, Wei
Bai, Alima
Zhao, Shifeng [1 ]
机构：
[1] Inner Mongolia Univ, Sch Phys Sci & Technol, Hohhot 010021, Peoples R China
来源：
MATERIALS LETTERS | 2014年 / 129卷
基金：
中国国家自然科学基金;
关键词：
Ferroelectrics; Structural; Leakage; Fatigue; MULTIFERROIC PROPERTIES; LA; NANOPARTICLES;
D O I：
10.1016/j.matlet.2014.05.046
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Single-phase multiferroic BiFeO3 and Holmium (Ho) doped BiFeO3 thin films have been prepared via solution-gelation technique. It shows that ferroelectric properties are enhanced and leakage current is reduced obviously after doping Ho. Such improved ferroelectric and leakage properties are attributed to the structural transforms from rhombohedral to the coexistence of tetragonal and orthorhombic symmetry structure after doping Ho. At the mean time, the fatigue behaviors of the present films were improved obviously after doped Ho. The present work provides an available way on enhancing multiferroic and fatigue properties of BiFeO3 based thin films. (C) 2014 Elsevier B.V. All rights reserved.
引用
收藏
页码：166 / 169
页数：4
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