Solution-phase Synthesis and Photoluminescence Characterization of Quaternary Cu2ZnSnS4 Nanocrystals

被引：1
|
作者：
Hamanaka, Yasushi [1 ]
Tsuzuki, Masakazu [1 ]
Ozawa, Kohei [1 ]
Kuzuya, Toshihiro [2 ]
机构：
[1] Nagoya Inst Technol, Dept Mat Sci & Engn, Showa Ku, Gokiso Cho, Nagoya, Aichi 4668555, Japan
[2] Muroran Inst Technol, Coll Design & Mfg Technol, Muroran, Hokkaido 0508585, Japan
来源：
PHYSICS OF SEMICONDUCTORS | 2013年 / 1566卷
关键词：
CZTS; Nanocrystal; Photoluminescence; Defect Level;
D O I：
10.1063/1.4848256
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Cu2ZnSnS4 (CZTS) nanocrystals were synthesized via solution phase route and their lattice defects were investigated by photoluminescence measurements. Ionization energies of the defect levels were estimated to be 10 and 72 meV from thermal quenching behavior of the photoluminescence spectra. These values are quite different from those experimentally estimated for vapor-grown CZTS films and crystals and theoretically calculated for bulk CZTS. The results indicate that the defects are characteristic of CZTS nanocrystals synthesized in the solution phase.
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页码：3 / +
页数：2
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