Improved contacts to p-type ZnSe using a ZnTe/Ga2Se3 contact layer and related p-n junction diode structures

被引：0
|
作者：
Yoshida, T [1 ]
Kobayashi, M [1 ]
Yoshikawa, A [1 ]
机构：
[1] CHIBA UNIV,FAC ENGN,DEPT ELECT & ELECT ENGN,INAGE KU,CHIBA 263,JAPAN
来源：
BLUE LASER AND LIGHT EMITTING DIODES | 1996年
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
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页码：461 / 464
页数：4
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